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IRFHM8337TRPBF-IR

IRFHM8337TRPBF-IR

MOSFET N-CH 30V 12A 8PQFN DL

IRFHM8337TRPBF-IR

IRFHM8337TRPBF-IR

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Part No :

IRFHM8337TRPBF-IR

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 12A 8PQFN DL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
825482 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:755 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN-Dual (3.3x3.3), Power33
Package / Case:8-PowerVDFN
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