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RM47N650T7

RM47N650T7

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RM47N650T7

RM47N650T7

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Part No :

RM47N650T7

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 47A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
1000000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 30 - Oct 04 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:47A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:81mOhm @ 15.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3111.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):417W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
RM47N650T7 is available at GangBo-ic.com, Please review product page below for detailed information, including RM47N650T7 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM47N650T7 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

Phone: 00852-52612101

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