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STH260N6F6-6

STH260N6F6-6

MOSFET N-CH 60V 180A H2PAK-6

STH260N6F6-6

STH260N6F6-6

Image is for reference, please contact us to get the real picture

Part No :

STH260N6F6-6

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 60V 180A H2PAK-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10390 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
STH260N6F6-6 PDF
Type Description
Series:DeepGATE™, STripFET™ VI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:183 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
STH260N6F6-6 is available at GangBo-ic.com, Please review product page below for detailed information, including STH260N6F6-6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STH260N6F6-6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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