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IPP052N06L3GXKSA1

IPP052N06L3GXKSA1

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Part No :

IPP052N06L3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 80A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10518 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
IPP052N06L3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 30 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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