SICFET N-CH 650V 70A TO247-4L
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 39mOhm @ 27A, 18V |
Vgs(th) (Max) @ Id: | 5.6V @ 13.3mA |
Gate Charge (Qg) (Max) @ Vgs: | 104 nC @ 18 V |
Vgs (Max): | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 1526 pF @ 500 V |
FET Feature: | - |
Power Dissipation (Max): | 262W |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-4L |
Package / Case: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF3709STRLPBFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
IXFA4N100P-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 4A TO263 |
|
SI2102-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 2.1A SOT323 |
|
NVMFS5C670NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 17A 5DFN |
|
STD7N80K5STMicroelectronics |
MOSFET N-CH 800V 6A DPAK |
|
FDMC7570SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 27A/40A POWER33 |
|
IPP80N06S407AKSA2Rochester Electronics |
MOSFET N-CH 60V 80A TO220-3-1 |
|
HUF75545S3SRochester Electronics |
MOSFET N-CH 80V 75A D2PAK |
|
APT41F100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 42A ISOTOP |
|
STD5N60M2STMicroelectronics |
MOSFET N-CH 600V 3.5A DPAK |
|
NVTFS5116PLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 6A 8WDFN |
|
SIS128LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 10.2A/33.7A PPAK |
|
BSZ22DN20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 7A 8TSDSON |