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SIS128LDN-T1-GE3

SIS128LDN-T1-GE3

MOSFET N-CH 80V 10.2A/33.7A PPAK

SIS128LDN-T1-GE3

SIS128LDN-T1-GE3

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Part No :

SIS128LDN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 80V 10.2A/33.7A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15969 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 30 - Jan 03 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:10.2A (Ta), 33.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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