IC DRAM 512MBIT PARALLEL 60VFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 60-VFBGA |
Supplier Device Package: | 60-VFBGA (8x9.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C1643KV18-400BZCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
CY7C4121KV13-633FCXICypress Semiconductor |
IC SRAM 144MBIT PAR 361FCBGA |
|
MR5A16AMA35Everspin Technologies, Inc. |
IC RAM 32MBIT PARALLEL 48FBGA |
|
IS25WP128-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY7C1041CV33-15VXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
24AA16-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
24AA64T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DFN |
|
CY7C019V-20AXIRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
BR24G01F-3AGTE2ROHM Semiconductor |
IC EEPROM 1K I2C 1MHZ 8SOP |
|
IS43DR16320E-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
CY7C09389V-6AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
93LC46A-E/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
SST25VF080B-50-4I-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 50MHZ 8SOIC |