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IPB60R250CPATMA1

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IPB60R250CPATMA1

IPB60R250CPATMA1

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Part No :

IPB60R250CPATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 12A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
62000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPB60R250CPATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.2 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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