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STP6N65M2

STP6N65M2

MOSFET N-CH 650V 4A TO220

STP6N65M2

STP6N65M2

Image is for reference, please contact us to get the real picture

Part No :

STP6N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 4A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
684868 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
STP6N65M2 PDF
Type Description
Series:MDmesh™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:226 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
STP6N65M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STP6N65M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STP6N65M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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