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FDFMA2P853T

FDFMA2P853T

MOSFET P-CH 20V 3A MICROFET

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FDFMA2P853T

FDFMA2P853T

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Part No :

FDFMA2P853T

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 3A MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
47860 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FDFMA2P853T PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MicroFET 2x2 Thin
Package / Case:6-UDFN Exposed Pad
FDFMA2P853T is available at GangBo-ic.com, Please review product page below for detailed information, including FDFMA2P853T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFMA2P853T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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