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FQD2N80TM

FQD2N80TM

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Part No :

FQD2N80TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 1.8A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
524852 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FQD2N80TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N80TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD2N80TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD2N80TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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