FIXED IND 100NH 1.131A 150 MOHM
MOSFET N-CH 600V 18A TO220
Type | Description |
---|---|
Series: | FDmesh™ II Plus |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1055 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFS4321TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 85A D2PAK |
|
DMP45H21DHE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 600MA SOT223 |
|
AOTF11S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO220-3F |
|
US5U1TRROHM Semiconductor |
MOSFET N-CH 30V 1.5A TUMT5 |
|
IPB031N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
IRFZ44VZPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 57A TO220AB |
|
BSP297H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
NVMFS6H818NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
RFD16N05Rochester Electronics |
MOSFET N-CH 50V 16A IPAK |
|
IPA60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8A TO220 |
|
NTE2381NTE Electronics, Inc. |
MOSFET P-CHANNEL 500V 2.7A TO220 |
|
IXFQ50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
RM052N100DFRectron USA |
MOSFET N-CHANNEL 100V 70A 8DFN |