MOSFET N-CH 60V 57A TO220AB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 12mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 65 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1690 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 92W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSP297H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
NVMFS6H818NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
RFD16N05Rochester Electronics |
MOSFET N-CH 50V 16A IPAK |
|
IPA60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8A TO220 |
|
NTE2381NTE Electronics, Inc. |
MOSFET P-CHANNEL 500V 2.7A TO220 |
|
IXFQ50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
RM052N100DFRectron USA |
MOSFET N-CHANNEL 100V 70A 8DFN |
|
BUK7M3R3-40HXNexperia |
MOSFET N-CH 40V 80A LFPAK33 |
|
TPH4R008NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 60A 8SOP |
|
RQ5H025TNTLROHM Semiconductor |
MOSFET N-CH 45V 2.5A TSMT3 |
|
SQD19P06-60L_T4GE3Vishay / Siliconix |
MOSFET P-CH 60V 20A TO252AA |
|
IXFX27N80QWickmann / Littelfuse |
MOSFET N-CH 800V 27A PLUS247-3 |
|
SSM3J56ACT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 1.4A CST3 |