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NVMFS6H818NWFT1G

NVMFS6H818NWFT1G

MOSFET N-CH 80V 20A/123A 5DFN

T4145035041-001

T4145035041-001

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NVMFS6H818NWFT1G

NVMFS6H818NWFT1G

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Part No :

NVMFS6H818NWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 20A/123A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11563 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
NVMFS6H818NWFT1G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NVMFS6H818NWFT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NVMFS6H818NWFT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMFS6H818NWFT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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