MOSFET P-CH 60V 8.6A PPAK SO-8
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 8.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14.5mOhm @ 14.4A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 190 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.9W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQD40020EL_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
SI3134KL-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, SOT-883 PACKAG |
|
TP0604N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 430MA TO92-3 |
|
FQA160N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 160A TO3PN |
|
STW40N60M2-4STMicroelectronics |
MOSFET N-CH 600V 34A TO247-3 |
|
NTMS3P03R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
IPLK70R600P7ATMA1Rochester Electronics |
IPLK70R600P7 - 700V COOLMOS P7 |
|
FKP253Sanken Electric Co., Ltd. |
MOSFET N-CH 250V 20A TO220 |
|
STD80N4F6STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
|
STB20NM50T4STMicroelectronics |
MOSFET N-CH 550V 20A D2PAK |
|
IPB60R099P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A D2PAK |
|
HP4410DYTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISA14DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 20A PPAK1212-8 |