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IPB60R099P7ATMA1

IPB60R099P7ATMA1

MOSFET N-CH 650V 31A D2PAK

BLF6G27-75,112

BLF6G27-75,112

RF TRANSISTOR

IPB60R099P7ATMA1

IPB60R099P7ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB60R099P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 31A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10404 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
IPB60R099P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1952 pF @ 400 V
FET Feature:-
Power Dissipation (Max):117W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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