Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 95mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD80N4F6STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
|
STB20NM50T4STMicroelectronics |
MOSFET N-CH 550V 20A D2PAK |
|
IPB60R099P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A D2PAK |
|
HP4410DYTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISA14DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 20A PPAK1212-8 |
|
STFU13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A TO220FP |
|
FQB9N50TMRochester Electronics |
MOSFET N-CH 500V 9A D2PAK |
|
FQU3N60TURochester Electronics |
MOSFET N-CH 600V 2.4A IPAK |
|
NDS351ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.4A SUPERSOT3 |
|
FDB016N04AL7Rochester Electronics |
MOSFET N-CH 40V 160A TO263-7 |
|
BUK7620-100A,118Rochester Electronics |
TRANSISTOR >30MHZ |
|
DMN30H4D1S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 430MA SOT23 |
|
SPB04N60S5ATMA1Rochester Electronics |
MOSFET N-CH 600V 4.5A TO263-3 |