MOSFET N-CH 650V 60A TO247
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 52mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 107 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 6180 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 780W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | - |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RF1S22N10SMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STH140N6F7-6STMicroelectronics |
MOSFET N-CH 60V 80A H2PAK-6 |
|
STP9N60M2STMicroelectronics |
MOSFET N-CH 600V 5.5A TO220 |
|
SI7461DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8 |
|
SQD40020EL_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
SI3134KL-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, SOT-883 PACKAG |
|
TP0604N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 430MA TO92-3 |
|
FQA160N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 160A TO3PN |
|
STW40N60M2-4STMicroelectronics |
MOSFET N-CH 600V 34A TO247-3 |
|
NTMS3P03R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
IPLK70R600P7ATMA1Rochester Electronics |
IPLK70R600P7 - 700V COOLMOS P7 |
|
FKP253Sanken Electric Co., Ltd. |
MOSFET N-CH 250V 20A TO220 |
|
STD80N4F6STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |