MOSFET N-CH 600V 20.7A TO220-31
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 114 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 34.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-31 Full Pack |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TSM60NB190CM2 RNGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 18A TO263 |
|
APT26F120B2Roving Networks / Microchip Technology |
MOSFET N-CH 1200V 27A T-MAX |
|
BSS306NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 2.3A SOT23-3 |
|
PMV22EN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FDD1600N10ALZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.8A TO252 |
|
RS1E280GNTBROHM Semiconductor |
MOSFET N-CH 30V 28A 8HSOP |
|
BSZ065N03LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/40A TSDSON |
|
PMV30UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQP17N08Rochester Electronics |
MOSFET N-CH 80V 16.5A TO220-3 |
|
RM60N75LDRectron USA |
MOSFET N-CHANNEL 75V 60A TO252-2 |
|
DMTH6005LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
IXTP3N110Wickmann / Littelfuse |
MOSFET N-CH 1100V 3A TO220AB |
|
SPI16N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |