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TSM60NB190CM2 RNG

TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

TSM60NB190CM2 RNG

TSM60NB190CM2 RNG

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Part No :

TSM60NB190CM2 RNG

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 600V 18A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10550 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
TSM60NB190CM2 RNG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1273 pF @ 100 V
FET Feature:-
Power Dissipation (Max):150.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D²Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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