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FDD1600N10ALZ

FDD1600N10ALZ

MOSFET N-CH 100V 6.8A TO252

FDD1600N10ALZ

FDD1600N10ALZ

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Part No :

FDD1600N10ALZ

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 6.8A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
FDD1600N10ALZ PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 50 V
FET Feature:-
Power Dissipation (Max):14.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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