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SPB80P06PGATMA1

SPB80P06PGATMA1

MOSFET P-CH 60V 80A TO263-3

SPB80P06PGATMA1

SPB80P06PGATMA1

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Part No :

SPB80P06PGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
944494 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
SPB80P06PGATMA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id:4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs:173 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5033 pF @ 25 V
FET Feature:-
Power Dissipation (Max):340W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80P06PGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPB80P06PGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPB80P06PGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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