MOSFET N-CH 500V 26A ISOPLUS247
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 160 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDD86540Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21.5A/50A DPAK |
|
FDMS003N08CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/147A POWER56 |
|
BUK9Y11-30B,115Nexperia |
MOSFET N-CH 30V 59A LFPAK56 |
|
TN0106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
FQP6P25Rochester Electronics |
MOSFET P-CH 250V 6A TO220-3 |
|
TPHR9003NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A 8SOP |
|
STV300NH02LSTMicroelectronics |
MOSFET N-CH 24V 200A 10POWERSO |
|
ON5257215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPP060N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/45A TO220-3 |
|
TSM80N1R2CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 5.5A TO251 |
|
NTD6N40-001-MORochester Electronics |
NFET DPAK 400V 1.1R |
|
AUIRF4104SRochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
PSMN1R2-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |