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TSM80N1R2CH C5G

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

MAX845ESA+G55

MAX845ESA+G55

IC POWER MANAGEMENT

TSM80N1R2CH C5G

TSM80N1R2CH C5G

Image is for reference, please contact us to get the real picture

Part No :

TSM80N1R2CH C5G

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 800V 5.5A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13710 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
TSM80N1R2CH C5G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:685 pF @ 100 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251 (IPAK)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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