23A, 100V, 0.084OHM, N-CHANNEL M
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 72mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.704 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 99W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVTFS5C466NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 51A 8WDFN |
|
RK7002BT116ROHM Semiconductor |
MOSFET N-CH 60V 250MA SST3 |
|
SI5424DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6A 1206-8 |
|
FCPF250N65S3R0LRochester Electronics |
MOSFET N-CH 650V 12A TO220F-3 |
|
ZXMN6A07FQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.2A SOT23 |
|
NTP5862NGRochester Electronics |
MOSFET N-CH 60V 98A TO220AB |
|
PSMN5R6-100XSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT43M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 45A T-MAX |
|
IRF7809AVTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13.3A 8SO |
|
SPB80P06PGATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 80A TO263-3 |
|
IXFR26N50Wickmann / Littelfuse |
MOSFET N-CH 500V 26A ISOPLUS247 |
|
FDD86540Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21.5A/50A DPAK |
|
FDMS003N08CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/147A POWER56 |