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NDBA180N10BT4H

NDBA180N10BT4H

MOSFET N-CH 100V 180A D2PAK

NDBA180N10BT4H

NDBA180N10BT4H

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Part No :

NDBA180N10BT4H

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 180A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
56083 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
NDBA180N10BT4H PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V, 15V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6.95 pF @ 50 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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