MOSFET N-CH 600V 109A TO247-4
Type | Description |
---|---|
Series: | CoolMOS™ C7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 109A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 17mOhm @ 58.2A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.91mA |
Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9890 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 446W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-4-1 |
Package / Case: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ON5520215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
J176_D74ZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXTA60N20T-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 60A TO263 |
|
SI7342DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
|
SI7812DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 75V 16A PPAK1212-8 |
|
SISS12DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 37.5A/60A PPAK |
|
BSS84AKVLNexperia |
MOSFET P-CH 50V 180MA TO236AB |
|
IXFN50N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 50A SOT-227B |
|
DMT6009LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 11A PWRDI3333 |
|
FDMS0309AS |
MOSFET N-CH 30V 21A/49A 8PQFN |
|
DMN3033LSN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A SC59-3 |
|
2SK3299-S-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF1404PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 202A TO220AB |