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IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

MOSFET N-CH 1200V 1.4A TO263

IXTA1R4N120P-TRL

IXTA1R4N120P-TRL

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Part No :

IXTA1R4N120P-TRL

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1200V 1.4A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
714371 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (IXTA)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA1R4N120P-TRL is available at GangBo-ic.com, Please review product page below for detailed information, including IXTA1R4N120P-TRL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTA1R4N120P-TRL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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