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PE1206FRF070R015L

PE1206FRF070R015L

RES 0.015 OHM 1% 1/4W 1206

FQP17P06

FQP17P06

POWER FIELD-EFFECT TRANSISTOR, 1

FQP17P06

FQP17P06

Image is for reference, please contact us to get the real picture

Part No :

FQP17P06

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
614061 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FQP17P06 PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP17P06 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP17P06 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP17P06 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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