MOSFET P-CH 60V 6.5A TO252-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 250mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 420 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3-313 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDBL86062-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 300A 8HPSOF |
|
STH80N10LF7-2AGSTMicroelectronics |
MOSFET N-CH 100V 80A H2PAK-2 |
|
RM150N30LT2Rectron USA |
MOSFET N-CH 30V 150A TO220-3 |
|
IRFBA90N20DPBFRochester Electronics |
IRFBA90N20 - SMPS HEXFET |
|
IXFJ20N85XWickmann / Littelfuse |
MOSFET N-CH 850V 9.5A ISO TO247 |
|
PMN40UPE,115Rochester Electronics |
MOSFET P-CH 20V 4.7A 6TSOP |
|
AUIRFZ44ZSRochester Electronics |
MOSFET N-CH 55V 51A D2PAK |
|
FQP13N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12.5A TO220-3 |
|
BSC360N15NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 33A 8TDSON |
|
IPW65R660CFDFKSA1Rochester Electronics |
MOSFET N-CH 700V 6A TO247-3 |
|
IRFD320PBFVishay / Siliconix |
MOSFET N-CH 400V 490MA 4DIP |
|
IXFN26N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 23A SOT-227B |
|
SIHLL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |