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IPW65R125C7XKSA1

IPW65R125C7XKSA1

MOSFET N-CH 650V 18A TO247-3

IPW65R125C7XKSA1

IPW65R125C7XKSA1

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Part No :

IPW65R125C7XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 18A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
IPW65R125C7XKSA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.67 pF @ 400 V
FET Feature:-
Power Dissipation (Max):101W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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