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TK2Q60D(Q)

TK2Q60D(Q)

MOSFET N-CH 600V 2A PW-MOLD2

MS502-W120-CW-BP

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TK2Q60D(Q)

TK2Q60D(Q)

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Part No :

TK2Q60D(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 2A PW-MOLD2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
993799 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
TK2Q60D(Q) PDF
Type Description
Series:π-MOSVII
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PW-MOLD2
Package / Case:TO-251-3 Stub Leads, IPak
TK2Q60D(Q) is available at GangBo-ic.com, Please review product page below for detailed information, including TK2Q60D(Q) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK2Q60D(Q) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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