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FQA90N10V2

FQA90N10V2

MOSFET N-CH 100V 105A TO3P

H2P1361A2B0100

H2P1361A2B0100

GPS L1+L2 STACK CERAMIC PATCH

FQA90N10V2

FQA90N10V2

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Part No :

FQA90N10V2

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 105A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11021 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
FQA90N10V2 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 52.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:191 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6.15 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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