MOSFET P-CH 200V 560MA 4DIP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 560mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 340mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 340 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Package / Case: | 4-DIP (0.300", 7.62mm) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STB80NF03L-04-1STMicroelectronics |
MOSFET N-CH 30V 80A I2PAK |
|
IXFN70N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 56A SOT227B |
|
TSM150NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 10A/41A 8PDFN |
|
APT26F120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 27A TO264 |
|
STW42N65M5STMicroelectronics |
MOSFET N-CH 650V 33A TO247-3 |
|
SI4491EDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 17.3A 8SO |
|
DMN1016UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 5.5A U-WLB1510-6 |
|
IRFR320PBFVishay / Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
|
NP110N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 110A TO263 |
|
STL31N65M5STMicroelectronics |
MOSFET N-CH 650V 15A PWRFLAT88 |
|
FQD16N15TMRochester Electronics |
MOSFET N-CH 150V 11.8A DPAK |
|
TN2640N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 220MA TO92-3 |
|
YJL2102W-F2-0000HF |
N-CH MOSFET 20V 3A SOT-323 |