







MOSFET N-CH 60V 3A SOT223
CONN RCPT 16P 0.079 GOLD PCB R/A
CONN IC DIP SOCKET 8POS GOLD
.050 X .050 C.L. FEMALE IDC ASSE
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 120mOhm @ 1.5A, 5V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 5 V |
| Vgs (Max): | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 440 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.3W (Ta) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-223 |
| Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
IRFD9220PBFVishay / Siliconix |
MOSFET P-CH 200V 560MA 4DIP |
|
|
STB80NF03L-04-1STMicroelectronics |
MOSFET N-CH 30V 80A I2PAK |
|
|
IXFN70N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 56A SOT227B |
|
|
TSM150NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 10A/41A 8PDFN |
|
|
APT26F120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 27A TO264 |
|
|
STW42N65M5STMicroelectronics |
MOSFET N-CH 650V 33A TO247-3 |
|
|
SI4491EDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 17.3A 8SO |
|
|
DMN1016UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 5.5A U-WLB1510-6 |
|
|
IRFR320PBFVishay / Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
|
|
NP110N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 110A TO263 |
|
|
STL31N65M5STMicroelectronics |
MOSFET N-CH 650V 15A PWRFLAT88 |
|
|
FQD16N15TMRochester Electronics |
MOSFET N-CH 150V 11.8A DPAK |
|
|
TN2640N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 220MA TO92-3 |