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BSZ068N06NSATMA1

BSZ068N06NSATMA1

BSZ068N06 - 12V-300V N-CHANNEL P

BSZ068N06NSATMA1

BSZ068N06NSATMA1

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Part No :

BSZ068N06NSATMA1

Manufacturer
Rochester Electronics
Description
BSZ068N06 - 12V-300V N-CHANNEL P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
231241 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 04 - Feb 08 2025
PDF
BSZ068N06NSATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 46W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
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