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IPP60R385CPXKSA1

IPP60R385CPXKSA1

MOSFET N-CH 650V 9A TO220-3

IPP60R385CPXKSA1

IPP60R385CPXKSA1

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Part No :

IPP60R385CPXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 9A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
053105 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
IPP60R385CPXKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP60R385CPXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP60R385CPXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP60R385CPXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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