English
简体中文
HEXFET N-CHANNEL POWER MOSFET
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150 V |
| Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 11mOhm @ 62A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5.27 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 380W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
SI7463ADP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 46A PPAK SO-8 |
|
IPP60R385CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
FDMS4435BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 9A/18A 8PQFN |
|
NVHL020N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 103A TO247-3 |
|
AUIRFSL3206Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
FQPF5P20Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
AONR36366Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 30A/34A 8DFN |
|
SSM6K217FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 1.8A ES6 |
|
CSD19503KCSTexas Instruments |
MOSFET N-CH 80V 100A TO220-3 |
|
FDMC86160Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 100V 9A POWER33 |
|
SPP04N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO220-3 |
|
STL16N65M2STMicroelectronics |
MOSFET N-CH 650V 7.5A POWERFLAT |
|
HUFA76609D3SRochester Electronics |
MOSFET N-CH 100V 10A TO252AA |