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FDI33N25TU

FDI33N25TU

MOSFET N-CH 250V 33A I2PAK

FDI33N25TU

FDI33N25TU

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Part No :

FDI33N25TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 33A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10617 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 10 - Feb 14 2025
PDF
FDI33N25TU PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.135 pF @ 25 V
FET Feature:-
Power Dissipation (Max):235W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FDI33N25TU is available at GangBo-ic.com, Please review product page below for detailed information, including FDI33N25TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDI33N25TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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