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STB6N60M2

STB6N60M2

MOSFET N-CH 600V 4.5A D2PAK

STB6N60M2

STB6N60M2

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Part No :

STB6N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 4.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
842484 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
STB6N60M2 PDF
Type Description
Series:MDmesh™ II Plus
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:232 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB6N60M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STB6N60M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB6N60M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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