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SIR104LDP-T1-RE3

SIR104LDP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

025-0507-000

025-0507-000

CONN DUST COVER 18

SIR104LDP-T1-RE3

SIR104LDP-T1-RE3

Image is for reference, please contact us to get the real picture

Part No :

SIR104LDP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 18.8A/81A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16050 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18.8A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4870 pF @ 50 V
FET Feature:-
Power Dissipation (Max):5.4W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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