MOSFET N-CH 80V 37A LFPAK56
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17.1 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2703 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 95W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB80P04P4L06ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
SI7328DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8 |
|
CSD18502Q5BTexas Instruments |
MOSFET N-CH 40V 26A/100A 8VSON |
|
FDI33N25TURochester Electronics |
MOSFET N-CH 250V 33A I2PAK |
|
PSMN3R3-40YS,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
IPD65R950C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.5A TO252-3 |
|
SI2302-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 3A SOT-23 |
|
MMBF170LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA SOT23-3 |
|
RM5N800IPRectron USA |
MOSFET N-CHANNEL 800V 5A TO251 |
|
DMT15H053SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 150V 5.2A/15A 8SO |
|
SIHG33N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO247AC |
|
SIR104LDP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK |
|
STH250N55F3-6STMicroelectronics |
MOSFET N-CH 55V 180A H2PAK |