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FQA70N15

FQA70N15

POWER FIELD-EFFECT TRANSISTOR, 7

FQA70N15

FQA70N15

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Part No :

FQA70N15

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10235 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
FQA70N15 PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:175 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:5.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
FQA70N15 is available at GangBo-ic.com, Please review product page below for detailed information, including FQA70N15 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQA70N15 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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