MOSFET N-CH 200V 150A TO268
Type | Description |
---|---|
Series: | HiPerFET™, TrenchT2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 177 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 11700 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 890W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDU8896Rochester Electronics |
MOSFET N-CH 30V 17A/94A IPAK |
|
FDN372SRochester Electronics |
MOSFET N-CH 30V 2.6A SUPERSOT3 |
|
IPB45N04S4L08ATMA1Rochester Electronics |
MOSFET N-CH 40V 45A TO263-3 |
|
SQD50034E_GE3Vishay / Siliconix |
MOSFET N-CH 60V 100A TO252AA |
|
NXV55UNRNexperia |
NXV55UN/SOT23/TO-236AB |
|
IPP45N06S4L08AKSA2Rochester Electronics |
PFET, 45A I(D), 60V, 0.0079OHM, |
|
XP151A12A2MRTorex Semiconductor Ltd. |
MOSFET N-CH 20V 1A SOT23 |
|
BUK663R2-40C,118Rochester Electronics |
PFET, 100A I(D), 40V, 0.0057OHM, |
|
SISS98DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 14.1A PPAK |
|
FQD12N20LTM-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO252 |
|
IRL530NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
AON2406Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 8A 6DFN |
|
IXTT90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 90A TO268 |