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ECS-250-20-30B-AEN-TR

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IPB45N04S4L08ATMA1

IPB45N04S4L08ATMA1

MOSFET N-CH 40V 45A TO263-3

IPB45N04S4L08ATMA1

IPB45N04S4L08ATMA1

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Part No :

IPB45N04S4L08ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 45A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
032403 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPB45N04S4L08ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:2.2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:2.34 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB45N04S4L08ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB45N04S4L08ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB45N04S4L08ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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