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SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

MOSFET N-CH 25V 20.1A/40A PPAK

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SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

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Part No :

SIAA00DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 20.1A/40A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
822382 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SIAA00DJ-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 12.5 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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