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SI4850BDY-T1-GE3

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SI4850BDY-T1-GE3

SI4850BDY-T1-GE3

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Part No :

SI4850BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 8.4A/11.3A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12079 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SI4850BDY-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 4.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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