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FDMA86108LZ

FDMA86108LZ

MOSFET N-CH 100V 2.2A 6MICROFET

FDMA86108LZ

FDMA86108LZ

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Part No :

FDMA86108LZ

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 2.2A 6MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13832 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 05 - Feb 09 2025
PDF
FDMA86108LZ PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:243mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:163 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-VDFN Exposed Pad
FDMA86108LZ is available at GangBo-ic.com, Please review product page below for detailed information, including FDMA86108LZ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMA86108LZ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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