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FQD17N08LTM

FQD17N08LTM

MOSFET N-CH 80V 12.9A TO252

FQD17N08LTM

FQD17N08LTM

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Part No :

FQD17N08LTM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 12.9A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17888 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 05 - Feb 09 2025
PDF
FQD17N08LTM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 6.45A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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