English
简体中文
MOSFET N-CH 200V 3.2A PPAK SO-8
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 80mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 42 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 1.9W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® SO-8 |
| Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
TK22E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 52A TO220 |
|
IPG20N04S4-08Rochester Electronics |
IPG20N04 - 20V-40V N-CHANNEL AUT |
|
FCPF11N65Rochester Electronics |
TRANS MOSFET N-CH 600V 11A 3PIN( |
|
CSD25483F4TTexas Instruments |
MOSFET P-CH 20V 1.6A 3PICOSTAR |
|
ZVN0124AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 160MA TO92-3 |
|
FQD17N08LTMRochester Electronics |
MOSFET N-CH 80V 12.9A TO252 |
|
DMP3056LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 7.1A 8SOP |
|
MCQ4438-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 8.2A 8SOP |
|
RM12N650IPRectron USA |
MOSFET N-CH 650V 11.5A TO251 |
|
SIHH11N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 11A PPAK 8 X 8 |
|
NTTFS4C06NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/67A 8WDFN |
|
FDPF8N50NZUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6.5A TO220F |
|
STF3NK80ZSTMicroelectronics |
MOSFET N-CH 800V 2.5A TO220FP |